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公开(公告)号：US10983181B2
公开(公告)日：2021-04-20
申请号：US16407234
申请日：2019-05-09
Applicant: TDK Corporation
Inventor： Kenichi Takano , Yuta Saito , Hiraku Hirabayashi
Abstract: A magnetic sensor whose output characteristic is less sensitive to the environmental temperature is provided. Magnetic sensor 1 has free layer 24 whose magnetization direction changes in response to an external magnetic field, pinned layer 22 whose magnetization direction is fixed with respect to the external magnetic field, spacer layer 23 that is located between pinned layer 22 and free layer 24 and that exhibits a magnetoresistance effect, and at least one magnet film 25 that is disposed on a lateral side of free layer 24 and that applies a bias magnetic field to free layer 24. A relationship of 0.7 ≤TC_HM/TC_FL≤1.05 is satisfied, where TC_HM is Curie temperature of the magnet film, and TC_FL is Curie temperature of the free layer.
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公开(公告)号：US12072399B2
公开(公告)日：2024-08-27
申请号：US18362011
申请日：2023-07-31
Applicant: TDK Corporation
Inventor： Kentaro Harada , Tsuyoshi Umehara , Kenichi Takano
IPC: G01R33/09
CPC classification number: G01R33/098 , G01R33/091
Abstract: A magnetic sensor is provided that can attenuate a magnetic field in a direction that is perpendicular to the magnetic field detecting direction at a higher rate than the magnetic field in the magnetic field detecting direction.
Magnetic sensor 1 has: first soft magnetic layer 3; a pair of second soft magnetic layers 4A, 4B that is positioned at a location that is different from first soft magnetic layer 3 in the Z direction of first soft magnetic layer 3; and magnetic field detecting element 2 that is positioned between first soft magnetic layer 3 and second soft magnetic layers 4A, 4B in the Z direction, wherein magnetic field detecting element 2 has a magnetic field detecting direction that is parallel to a direction in which the pair of second soft magnetic layers 4A, 4B is arranged. As viewed in the Z direction, second soft magnetic layers 4A, 4B are positioned on both sides of a center of first soft magnetic layer 3, and magnetic field detecting element 2 is positioned inside of a periphery of first soft magnetic layer 3.-
公开(公告)号：US11181557B2
公开(公告)日：2021-11-23
申请号：US16101820
申请日：2018-08-13
Applicant: TDK CORPORATION
Inventor： Kenichi Takano , Yuta Saito , Suguru Watanabe
Abstract: A current sensor includes a magnetic sensor device. The magnetic sensor device includes a magnetic sensor, a first magnetic layer, and a second magnetic layer in non-contact with the first magnetic layer. The magnetic sensor, the first magnetic layer, and the second magnetic layer are disposed across a virtual straight line and arranged in this order in a direction parallel to the virtual straight line. Different portions of magnetic flux generated by a current to be detected pass through the magnetic sensor, the first magnetic layer, and the second magnetic layer.
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公开(公告)号：US20180356448A1
公开(公告)日：2018-12-13
申请号：US15997986
申请日：2018-06-05
Applicant: TDK Corporation
Inventor： Yuta Saito , Kenichi Takano , Hiraku Hirabayashi
CPC classification number: G01R15/205 , G01R19/0092 , G01R33/093
Abstract: A current sensor has: a magneto-resistive effect element which is arranged near a current line, to which a signal magnetic field is applied, the signal magnetic field being is induced by a current that flows in the current line, and which generates a magneto-resistive change in accordance with a change of the signal magnetic field; cancelling magnetic field generating means that is provided near the magneto-resistive effect element and that generates a cancelling magnetic field that cancels the signal magnetic field; a first soft magnetic body that is provided between the magneto-resistive effect element and the current line; and a pair of second soft magnetic bodies that are provided on both sides of the magneto-resistive effect element with regard to a magnetization detecting direction of the magneto-resistive effect element.
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公开(公告)号：US11408950B2
公开(公告)日：2022-08-09
申请号：US17036104
申请日：2020-09-29
Applicant: TDK Corporation
Inventor： Kentaro Harada , Tsuyoshi Umehara , Kenichi Takano
IPC: G01R33/09
Abstract: A magnetic sensor is provided that can attenuate a magnetic field in a direction that is perpendicular to the magnetic field detecting direction at a higher rate than the magnetic field in the magnetic field detecting direction.
Magnetic sensor 1 has: first soft magnetic layer 3; a pair of second soft magnetic layers 4A, 4B that is positioned at a location that is different from first soft magnetic layer 3 in the Z direction of first soft magnetic layer 3; and magnetic field detecting element 2 that is positioned between first soft magnetic layer 3 and second soft magnetic layers 4A, 4B in the Z direction, wherein magnetic field detecting element 2 has a magnetic field detecting direction that is parallel to a direction in which the pair of second soft magnetic layers 4A, 4B is arranged. As viewed in the Z direction, second soft magnetic layers 4A, 4B are positioned on both sides of a center of first soft magnetic layer 3, and magnetic field detecting element 2 is positioned inside of a periphery of first soft magnetic layer 3.-
Patent Agency Ranking
公开(公告)号：US11579213B2
公开(公告)日：2023-02-14
申请号：US17205222
申请日：2021-03-18
Applicant: TDK Corporation
Inventor： Kenichi Takano , Yuta Saito , Hiraku Hirabayashi
Abstract: A magnetic sensor whose output characteristic is less sensitive to the environmental temperature is provided. Magnetic sensor 1 has free layer 24 whose magnetization direction changes in response to an external magnetic field, pinned layer 22 whose magnetization direction is fixed with respect to the external magnetic field, spacer layer 23 that is located between pinned layer 22 and free layer 24 and that exhibits a magnetoresistance effect, and at least one magnet film 25 that applies a bias magnetic field to free layer 24. The film thickness of the magnet film is 15 nm or more and 50 nm or less. The relationship of 0.7≤TC_HM/TC_FL≤1.05 is satisfied, where TC_HM is Curie temperature of the magnet film, and TC_FL is Curie temperature of the free layer.
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公开(公告)号：US11531071B2
公开(公告)日：2022-12-20
申请号：US17228048
申请日：2021-04-12
Applicant: TDK CORPORATION
Inventor： Kenichi Takano , Hiraku Hirabayashi , Yuta Saito
Abstract: A magnetic field detection device of an embodiment of the disclosure includes: a first magnetic field detection element having a first resistance value increasing upon application of a first magnetic field in a first direction and decreasing upon application of a second magnetic field in a second direction; and a second magnetic field detection element having a second resistance value decreasing upon application of the first magnetic field and increasing upon application of the second magnetic field. The first and second magnetic field detection elements each include first and second magneto-resistive effect films coupled in series. The first magneto-resistive effect film has a first major-axis direction inclined at a first inclination angle relative to the first direction. The second magneto-resistive effect film has a second major-axis direction inclined at a second inclination angle relative to the first direction. The magnetic field detection device satisfies conditional expressions (1) and (2).
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8.发明授权公开(公告)号：US11506733B2
公开(公告)日：2022-11-22
申请号：US17350558
申请日：2021-06-17
Applicant: TDK Corporation
Inventor： Kenichi Takano , Tsuyoshi Umehara , Yuta Saito , Hiraku Hirabayashi
Abstract: A magnetic sensor comprises a magnetoresistive effect element including a first side surface and a second side surface facing in opposite directions along a first axis and a first end surface and a second end surface facing in opposite directions along a second axis substantially orthogonal to the first axis. The sensor has a sensitivity axis extending in a direction of the first axis, a first yoke unit provided adjacent to the first side surface of the magnetoresistive effect element, and a first bias magnetic field generation unit provided adjacent to the first end surface of the magnetoresistive effect element. The first bias magnetic field generation unit is provided to be capable of applying a bias magnetic field on the magnetoresistive effect element and the first yoke unit.
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公开(公告)号：US11156478B2
公开(公告)日：2021-10-26
申请号：US16749313
申请日：2020-01-22
Applicant: TDK Corporation
Inventor： Kenichi Takano , Yuta Saito , Hiraku Hirabayashi
IPC: G01D5/16
Abstract: Magnetic sensor 1 has MR elements 11A to 14A that are connected to each other. MR elements 11A to 14A belongs either to group G1 in which electric resistance increases when the magnetization direction of each free layer 26 is rotated a predetermined angle in a same direction, or to group G2 in which the electric resistance decreases when the magnetization direction of each free layer 26 is rotated the predetermined angle in the same direction. A variation of an output of magnetic sensor 1 due to an increase of the electric resistance of the electric resistance elements of one group and a variation of the output of magnetic sensor 1 due to a decrease of the electric resistance of the electric resistance elements of another group are cancelled out.
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10.发明授权公开(公告)号：US10859606B2
公开(公告)日：2020-12-08
申请号：US16007426
申请日：2018-06-13
Applicant: TDK CORPORATION
Inventor： Kenichi Takano , Yuta Saito , Hiraku Hirabayashi
Abstract: An offset estimation unit determines an estimate of an offset of a detection value to be output from a magnetic sensor. The offset estimation unit includes an initial function storing unit, a function settlement unit, and an estimate determination unit. The initial function storing unit stores an initial function for determining the estimate according to a first variable and a second variable, with a reference offset as the first variable and temperature as the second variable, the reference offset being the offset at a reference temperature. The function settlement unit settles a value of the first variable of the initial function by the reference offset, and turns the initial function into an estimate determination function for determining the estimate according to a value of the second variable. The estimate determination unit determines the estimate by settling the value of the second variable of the estimate determination function by temperature information.
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