Multi-layered band-pass filter device

    公开(公告)号:US12218396B2

    公开(公告)日:2025-02-04

    申请号:US17979884

    申请日:2022-11-03

    Abstract: A filter includes first and second resonators and first and second stub resonators. Each of the first and second resonators includes a first conductor part and a second conductor part electrically connected to the first conductor part and having an impedance smaller than an impedance of the first conductor part. The first stub resonator is electrically connected to the first conductor part of the first resonator. The second stub resonator is electrically connected to the first conductor part of the second resonator. The shape of the first stub resonator and the shape of the second stub resonator are different from each other.

    Band-pass filter
    2.
    发明授权

    公开(公告)号:US11955681B2

    公开(公告)日:2024-04-09

    申请号:US17556559

    申请日:2021-12-20

    CPC classification number: H01P1/20

    Abstract: A band-pass filter includes a first input/output port, a second input/output port, a plurality of resonators, and a multilayer stack. The multilayer stack includes a plurality of stacked dielectric layers. Each of the resonators is an open-ended resonator formed of a conductor line in the multilayer stack. Each of the resonators includes a resonator conductor portion including a first line part and a second line part located away from each other in a direction orthogonal to a stacking direction of the plurality of dielectric layers, and a third line part connecting the first line part and the second line part. The first to third line parts extend to surround a space between the first line part and the second line part.

    Multilayered filter device
    3.
    发明授权

    公开(公告)号:US12294131B2

    公开(公告)日:2025-05-06

    申请号:US17968214

    申请日:2022-10-18

    Abstract: A filter device includes first to third resonators. Each of the first to third resonators includes a first line part and a second line part electrically connected to the first line part and having an impedance smaller than an impedance of the first line part. The impedance ratio in at least one of the first to third resonators is 0.3 or smaller. The shape of each of the second line part of the first resonator and the second line part of the second resonator is long in a direction orthogonal to a stacking direction and crossing the longitudinal direction of the second line part of the third resonator.

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