公开(公告)号：US20220406530A1

公开(公告)日：2022-12-22

申请号：US17777515

申请日：2021-03-22

Applicant: TDK Corporation

Inventor： Daiki ISHII ,  Eiko TAMURA

IPC: H01G4/33 ,  H01G4/012 ,  H01G4/232 ,  H01G2/06

Abstract: To provide a thin film capacitor capable of achieving low impedance over a wide frequency band. A thin film capacitor includes: a capacitor layer having a structure in which internal electrode layers and dielectric layers are alternately stacked; a redistribution layer stacked on the capacitor layer; and external terminals. The redistribution layer includes a wiring pattern connecting the external terminal and the internal electrode layers and a wiring pattern connecting the external terminal and the internal electrode layers. A distance between first and second via conductors is smaller than distance between second and third via conductors and is smaller than a distance between first and fourth via conductors.