STRESS REDUCTION ON STACKED TRANSISTOR CIRCUITS

    公开(公告)号:US20190326910A1

    公开(公告)日:2019-10-24

    申请号:US16378742

    申请日:2019-04-09

    Abstract: A circuit includes a first transistor having first and second current terminals and a first control input, and a second transistor having third and fourth current terminals and a second control input. The third current terminal is coupled to the second current terminal at an intermediate node. In some cases, a third transistor is connected to the intermediate node to bias the intermediate rather than letting the intermediate node float. In other cases, a capacitor is connected to the intermediate node to reduce a negative voltage that might otherwise be present on the intermediate node.

    STRESS REDUCTION ON STACKED TRANSISTOR CIRCUITS

    公开(公告)号:US20190326909A1

    公开(公告)日:2019-10-24

    申请号:US16262327

    申请日:2019-01-30

    Abstract: A circuit includes a first transistor having first and second current terminals and a first control input, and a second transistor having third and fourth current terminals and a second control input. The third current terminal is connected to the second current terminal at an intermediate node and the fourth current terminal connected to a ground or supply node. In some cases, a third transistor is connected to the intermediate node to bias the intermediate rather than letting the intermediate node float. In other cases, a capacitor is connected to the intermediate node to reduce a negative voltage that might otherwise be present on the intermediate node.

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