公开(公告)号：US20190207384A1

公开(公告)日：2019-07-04

申请号：US15856457

申请日：2017-12-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Vishnu RAVINUTHULA ,  Simon Bevan CHURCHILL ,  Mark Allen HAMLETT ,  Eric RUDEEN

IPC: H02H9/04 ,  H02H1/00 ,  H04B17/345

CPC classification number: H02H9/04 ,  H02H1/0007 ,  H04B1/40 ,  H04B17/345

Abstract: A voltage protection circuit, comprising a first metal oxide semiconductor field effect transistor (MOSFET) having a gate terminal coupled to a first node, a source terminal coupled to a second node, and a drain terminal coupled to a third node, a second MOSFET having a gate terminal coupled to the first node, a source terminal coupled to the second node, and a drain terminal coupled to a fourth node, a first current mirror coupled to the third node and configured to couple to a fifth node, a sixth node, and a regulator supply, and a second current mirror coupled to the fourth node, and configured to couple to the fifth node, the sixth node, and a ground node.