公开(公告)号：US10811534B2

公开(公告)日：2020-10-20

申请号：US15871785

申请日：2018-01-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Xiang-Zheng Bo ,  Michelle N. Nguyen ,  Douglas T. Grider

IPC: H01L29/04 ,  H01L29/78 ,  H01L29/66 ,  H01L21/265 ,  H01L29/10

Abstract: In some examples, a transistor includes a first well doped with a first-type dopant having a first concentration. The transistor also includes a gate oxide layer on a portion of the first well and a gate layer on the gate oxide layer. The transistor further includes a first segment of a second well doped with the first-type dopant having a second concentration, the first segment underlapping a first portion of the gate layer. The transistor also includes a source region doped with a second-type dopant having a third concentration, the source region in the first segment. The transistor further includes a drain region doped with the second-type dopant having a concentration that is substantially the same as the third concentration.