公开(公告)号：US20210257312A1

公开(公告)日：2021-08-19

申请号：US17176995

申请日：2021-02-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jungwoo Joh ,  Young-Soon Park

IPC: H01L23/552 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/48 ,  H01L29/78 ,  H05K1/02

Abstract: A semiconductor device a strapped interconnect line, which in turn includes a first interconnect line at a first level above a semiconductor substrate, and a second interconnect line at a second level above the interconnect substrate. A dielectric capping layer is located directly on the first interconnect line. A plurality of strapping vias are connected between the first interconnect line and the second interconnect line. Each of the strapping vias extends from a first side of the first interconnect line to a second side of the second interconnect line.