Patent search ap:("THE REGENTS OF THE UNIVERSITY OF MICHIGAN Page Office of Technology Transfer") AND inv:"Kai SUN"

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发明申请
HIGH EFFICIENCY InGaN LIGHT EMITTING DIODES 有权

公开(公告)号：US20220367561A1

公开(公告)日：2022-11-17

申请号：US17745753

申请日：2022-05-16

Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Office of Technology Transfer

Inventor： Xianhe LIU , Yi SUN , Yakshita MALHOTRA , Ayush PANDEY , Ping WANG , Yuanpeng WU , Kai SUN , Zetian MI

IPC: H01L27/15

Abstract: In various embodiments, the present disclosure includes a nitrogen-polar (N-polar) nanowire that includes an indium gallium nitride (InGaN) quantum well formed by selective area growth. It is noted that the N-polar nanowire is operable for emitting light.

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