公开(公告)号：US3805129A

公开(公告)日：1974-04-16

申请号：US29739472

申请日：1972-10-13

Applicant: THOMSON CSF

Inventor： PHAM NGU T

IPC: H01L29/80 ,  H01L27/00 ,  H01L29/00 ,  H01L29/812 ,  H01L5/00

CPC classification number: H01L29/00 ,  H01L27/00 ,  H01L29/812

Abstract: A field effect transistor (F.E.T.), comprising two control gates disposed in side-by-side relationship and capable of being operated at frequencies higher than 1 GHz, is provided. A gate G1 is deposited at the bottom of a trench T1, recessed in the F.E.T.''s semiconductive layer and connected to a contact stud K1. It encloses the source S of the transistor and is surrounded, at a distance of the order of 10 microns, by a gate G2 deposited at the bottom of a trench T2 recessed in the F.E.T.''s semiconductive layer and connected to a contact stud K2. The drain D of the transistor surrounds the trench T2 and the stud K2. The cross-section of the trenches is of the order of 1 micron by 1 micron.

Abstract translation: 提供了一种场效应晶体管（F.E.T.），其包括以并排关系设置并能够在高于1GHz的频率下操作的两个控制栅极。