公开(公告)号：US3812369A

公开(公告)日：1974-05-21

申请号：US34327573

申请日：1973-03-21

Applicant: THOMSON CSF

Inventor： ROUGEOT H

IPC: H01L27/00 ,  H03K17/78 ,  G02F1/28

CPC classification number: H03K17/78 ,  H01L27/00 ,  Y10T307/773

Abstract: A sequential switching device using solid-state components, consisting in a bar of gallium arsenide monocrystal, in which adjacent diodes are formed, the terminals of same sign of which are arranged on the two opposite faces of the bar. These diodes, which are virtually insulators below a certain threshold voltage applied to their terminals are conductive beyond it; they emit photon radiation in the conductive condition, and, conversely, change from the insulating to the conductive condition under the effect of said photon radiation. By combining these diodes in sets of three in order to form three groups to the terminals, of which there are applied voltage pulses which succeed one another without interruption or overlap, propagation of switching along the set of diode is achieved, each diode irradiating its two neighbours, when in the conductive condition.