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公开(公告)号：US11562889B2
公开(公告)日：2023-01-24
申请号：US17105938
申请日：2020-11-27
发明人： Mayo Uda , Manabu Tsuruta , Keigo Toyoda
摘要： A plasma processing apparatus includes a chamber having a sidewall and a plasma processing space surrounded by the sidewall, and a first side gas inlet line and a second side gas inlet line configured to introduce at least one gas from the sidewall into the plasma processing space. The first side gas inlet line includes a plurality of first side gas injectors symmetrically arranged along a circumferential direction on the sidewall and configured to introduce the gas in a first direction into the plasma processing space. Further, the second side gas inlet line includes a plurality of second side gas injectors symmetrically arranged along the circumferential direction on the sidewall and configured to introduce the gas in a second direction different from the first direction into the plasma processing space.
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