公开(公告)号：US20210313151A1

公开(公告)日：2021-10-07

申请号：US17220982

申请日：2021-04-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi TOHARA ,  Naokazu FURUYA ,  Yosuke TAMURO ,  Yuzuru SAKAI

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a chamber accommodating a plurality of substrates; a plurality of substrate supports provided inside the chamber and configured to support a substrate; a plurality of radio-frequency power sources provided corresponding to the plurality of substrate supports, and configured to supply radio-frequency power to the plurality of substrate supports, respectively; and a plurality of shields configured to compart the inside of the chamber and provided corresponding to the plurality of substrate supports to define a processing space where plasma is generated. A radio-frequency current path is formed between the plurality of shields so as not to interfere with one another.