公开(公告)号：US20140283734A1

公开(公告)日：2014-09-25

申请号：US14223547

申请日：2014-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taichi MONDEN ,  Junichi KITAGAWA ,  Seokhyoung HONG ,  Yoshiro KABE

IPC: C30B1/02 ,  C30B30/00

CPC classification number: C30B1/023 ,  C30B29/06 ,  C30B30/00

Abstract: The present disclosure relates to a heat treatment method of performing a single crystallization of amorphous silicon formed on a substrate to be processed by irradiating the substrate with a microwave. The heat treatment method includes: irradiating the substrate with a microwave to increase a temperature of the substrate to a first temperature such that the amorphous silicon formed on the substrate becomes a single crystal at an interface between the substrate and the amorphous silicon and a nucleation does not occur in a region except the interface; irradiating the substrate with a microwave to heat the substrate at the first temperature for a predetermined period; irradiating the substrate with the microwave to increase the first temperature to a second temperature, which is higher than the first temperature; and irradiating the substrate with the microwave to heat the substrate at the second temperature.

Abstract translation: 本公开内容涉及通过用微波照射基板来在待处理的基板上进行单晶结晶化的热处理方法。 热处理方法包括：用微波照射基板以将基板的温度升高到第一温度，使得形成在基板上的非晶硅在基板和非晶硅之间的界面处成为单晶，并且成核确定 不在界面以外的区域发生; 用微波照射基板，在第一温度下加热基板一段预定时间; 用微波照射基板以将第一温度升高到高于第一温度的第二温度; 以及在所述第二温度下用所述微波照射所述基板以加热所述基板。

公开(公告)号：US20140041682A1

公开(公告)日：2014-02-13

申请号：US13960037

申请日：2013-08-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taichi MONDEN ,  Yoshiro KABE ,  Kouji SHIMOMURA

IPC: B08B7/00

CPC classification number: B08B7/0035 ,  H01J37/32192 ,  H01J37/32522 ,  H01J37/32862

Abstract: A method for cleaning a microwave processing apparatus including a processing chamber for accommodating therein an object to be processed, a microwave introducing unit for introducing microwaves into the chamber, and a gas introducing unit for introducing a gas into the processing chamber is provided. The method includes loading an object for cleaning into the processing chamber, introducing a gas into the processing chamber, introducing microwaves into the processing chamber, and unloading the object from the processing chamber.

Abstract translation: 一种微波处理装置的清洗方法，其特征在于，包括：处理室，其容纳有被处理物的微波处理装置，将微波导入所述室的微波导入部，以及将气体导入所述处理室的气体导入部。 该方法包括将清洁物体装载到处理室中，将气体引入处理室，将微波引入处理室，以及从处理室卸载物体。