公开(公告)号：US20190339342A1

公开(公告)日：2019-11-07

申请号：US16462395

申请日：2017-06-28

申请人： TSINGHUA UNIVERSITY ,  SICHUAN ENERGY INTERNET RESEARCH INSTITUTE, TSINGHUA UNIVERSITY

发明人： Jinliang HE ,  Yong OUYANG ,  Jun HU ,  Shanxiang WANG ,  Gen ZHAO ,  Zhongxu WANG ,  Rong ZENG ,  Chijie ZHUANG ,  Bo ZHANG ,  Zhanqing YU

IPC分类号： G01R33/09

摘要： A wide magnetic field range measuring method includes the measurement step for a medium-and-large magnetic field and the measurement step for an extremely large magnetic field. In addition to that, the method further includes: Step 1: placing four orthogonally-configured magnetic resistance resistors into an external magnetic field and obtaining the resistance value of each magnetic resistance resistor; Step 2: substituting the resistance values of two mutually orthogonal magnetic resistance resistors into the measurement step for a medium-and-large magnetic field for calculation; if calculation process converges, then, determining that the external magnetic field as a medium-and-large magnetic field with the calculation result representing the magnetic field intensity and the direction of the medium-and-large magnetic field.

公开(公告)号：US20190277924A1

公开(公告)日：2019-09-12

申请号：US16462417

申请日：2017-06-28

申请人： TSINGHUA UNIVERSITY ,  SICHUAN ENERGY INTERNET RESEARCH INSTITUTE, TSINGHUA UNIVERSITY

发明人： Jun HU ,  Yong OUYANG ,  Jinliang HE ,  Shanxiang WANG ,  Gen ZHAO ,  Zhongxu WANG ,  Rong ZENG ,  Chijie ZHUANG ,  Bo ZHANG ,  Zhanqing YU

IPC分类号： G01R33/09

摘要： An optimized extremely-large magnetic field measuring method includes: placing four orthogonally configured tunneling magnetoresistive resistors into an externally applied magnetic field, acquiring the resistances of the tunneling magnetoresistive resistors; calculating the angle between a magnetization direction of a free layer of each tunneling magnetoresistive resistor and that of a reference layer on the basis of the resistances of the four resistors; calculating magnetic field intensity H1 and direction θ1 of the externally applied magnetic field; calculating magnetic field intensity H2 and direction θ2 of the externally applied magnetic field; and determining final magnetic field intensity H0 of the externally applied magnetic field on the basis of magnetic field intensity H1 and of magnetic field intensity H2; determining final direction θ of the externally applied magnetic field on the basis of direction θ2 and of direction θ1; and optimizing on the basis of direction θ and of magnetic field intensity H0.