公开(公告)号：US07629185B2

公开(公告)日：2009-12-08

申请号：US11268735

申请日：2005-11-08

申请人： Tadashi Takeoka ,  Takuroh Ishikura

发明人： Tadashi Takeoka ,  Takuroh Ishikura

IPC分类号： H01L21/66

CPC分类号： H01S5/0021

摘要： A semiconductor laser device manufacturing method includes, sequentially, a first aging step S1, a first inspection step S2, a mounting step S3, a second aging step S4 and a second inspection step S5. Since the first aging step S1 on a semiconductor laser chip with a high-temperature direct current conduction is performed before the mounting step S3, threshold current and drive current of the semiconductor laser chip before mounting can be reduced.

摘要翻译： 半导体激光器件制造方法依次包括第一老化步骤S1，第一检查步骤S2，安装步骤S3，第二老化步骤S4和第二检查步骤S5。 由于在安装步骤S3之前执行具有高温直流导通的半导体激光器芯片上的第一老化步骤S1，所以可以减少安装之前的半导体激光器芯片的阈值电流和驱动电流。

公开(公告)号：US20060121633A1

公开(公告)日：2006-06-08

申请号：US11268735

申请日：2005-11-08

申请人： Tadashi Takeoka ,  Takuroh Ishikura

发明人： Tadashi Takeoka ,  Takuroh Ishikura

IPC分类号： H01L21/66 ,  H01S5/00

CPC分类号： H01S5/0021

摘要： A semiconductor laser device manufacturing method includes, sequentially, a first aging step S1, a first inspection step S2, a mounting step S3, a second aging step S4 and a second inspection step S5. Since the first aging step S1 on a semiconductor laser chip with a high-temperature direct current conduction is performed before the mounting step S3, threshold current and drive current of the semiconductor laser chip before mounting can be reduced.

摘要翻译： 半导体激光器件制造方法依次包括第一老化步骤S1，第一检查步骤S2，安装步骤S3，第二老化步骤S 4和第二检查步骤S 5.由于第一老化步骤S 在安装步骤S3之前，在安装前半导体激光芯片的阈值电流和驱动电流可以减小的情况下，在具有高温直流导通的半导体激光器芯片上执行图1的工作。