公开(公告)号：US06688344B2

公开(公告)日：2004-02-10

申请号：US10159769

申请日：2002-05-30

申请人： Tain-Chen Hu ,  Ming Te More ,  Wei William Lee

发明人： Tain-Chen Hu ,  Ming Te More ,  Wei William Lee

IPC分类号： B65B104

CPC分类号： H01L21/67393

摘要： A system and method for evacuating potential wafer-corroding and contaminating residual process gases from the interior of a semiconductor wafer pod before, after or both before and after a process is performed on the wafers. The residual process gases are first evacuated from the wafer pod, which is next charged with a fresh supply of inert gas. The system is adapted to evacuate and charge the wafer pod as the wafer pod typically rests on a load port of a SMIF prior to transfer of the pod to another destination in the semiconductor fabrication facility, prior to internalization of the wafers into a processing tool, or both.

摘要翻译： 在晶片上执行在半导体晶片盒的内部之前，之后或之后或之后对晶片腐蚀和污染残余工艺气体排出的系统和方法。 首先将剩余的工艺气体从晶片盒中抽出，然后再装入新鲜的惰性气体。 该系统适于对晶片盒进行抽空和充电，因为在将晶片内置到处理工具之前，晶片盒通常在将盒体转移到半导体制造设备中的另一个目的地之前搁置在SMIF的负载端口上， 或两者。

公开(公告)号：US06553335B2

公开(公告)日：2003-04-22

申请号：US09886838

申请日：2001-06-21

申请人： Jim-Jey Huang ,  Tain-Chen Hu ,  Jui-Ping Chuang

发明人： Jim-Jey Huang ,  Tain-Chen Hu ,  Jui-Ping Chuang

IPC分类号： G06E1130

CPC分类号： H01L21/67253 ,  H01J37/32862 ,  H01J37/32963

摘要： A method for determining end-point in a chamber cleaning process is disclosed which can be carried out by first providing a chamber that has a cavity for conducting a semiconductor fabrication process therein, then mounting a crystal sensor on a surface of the chamber cavity at a position that the sensor is exposed to gases or liquids or generated by the fabrication process; conducting a semiconductor fabrication process in the chamber; flowing a cleaning fluid into and in-situ cleaning the surface of the chamber cavity; inputting an oscillating frequency into the crystal sensor and monitoring an output frequency of oscillation from the sensor; and comparing the output frequency of oscillation to an output frequency from a crystal sensor that has a clean surface and determining when the surface of the chamber cavity is cleaned.