公开(公告)号：US20220238697A1

公开(公告)日：2022-07-28

申请号：US17333592

申请日：2021-05-28

申请人： Taiwan Semiconductor Manfacturing Co., Ltd.

发明人： Wen-Kai Lin ,  Che-Hao Chang ,  Chi On Chui ,  Yung-Cheng Lu ,  Szu-Ying Chen

IPC分类号： H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L29/06 ,  H01L21/02 ,  H01L29/417

摘要： A method includes performing an atomic layer deposition (ALD) process to form a dielectric layer on a wafer. The ALD process comprises an ALD cycle includes pulsing calypso ((SiCl3)2CH2), purging the calypso, pulsing ammonia, and purging the ammonia. The method further includes performing a wet anneal process on the dielectric layer, and performing a dry anneal process on the dielectric layer.