公开(公告)号：US20210242150A1

公开(公告)日：2021-08-05

申请号：US17233967

申请日：2021-04-19

申请人： Taiwan Semiconductor Manfacturing Co., Ltd.

发明人： Hui-Min Huang ,  Chih-Wei Lin ,  Tsai-Tsung Tsai ,  Ming-Da Cheng ,  Chung-Shi Liu ,  Chen-Hua Yu

IPC分类号： H01L23/00 ,  H01L23/538 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48 ,  H01L23/498 ,  H01L23/48

摘要： A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.