公开(公告)号：US20220310815A1

公开(公告)日：2022-09-29

申请号：US17326848

申请日：2021-05-21

申请人： Taiwan Semiconductor Manfacturing Co., Ltd.

发明人： Tze-Liang Lee

IPC分类号： H01L29/423 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L27/088

摘要： A method includes depositing a dielectric layer, depositing a plurality of mandrel strips over the dielectric layer, and forming a plurality of spacers on sidewalls of the plurality of mandrel strips to form a plurality of mask groups. Each of the plurality of mandrel strips and two of the plurality of spacers form a mask group in the plurality of mask groups. The method further includes forming a mask strip connecting two neighboring mask groups in the plurality of mask groups, using the plurality of mask groups and the mask strip collectively as an etching mask to etch the dielectric layer and to form trenches in the dielectric layer, and filling a conductive material into the trenches to form a plurality of conductive features.