公开(公告)号：US20240128231A1

公开(公告)日：2024-04-18

申请号：US18149935

申请日：2023-01-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu Wei Liu ,  Pei-Wei Lee ,  Yun-Chung Wu ,  Bo-Yu Chiu ,  Szu-Hsien Lee ,  Mirng-Ji Lii

IPC: H01L23/00 ,  H01L25/00 ,  H01L29/02

CPC classification number: H01L24/83 ,  H01L24/29 ,  H01L25/00 ,  H01L29/02 ,  H01L2224/29186 ,  H01L2224/83896

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are presented. In embodiments the methods of manufacturing include depositing a first bonding layer on a first substrate, wherein the first substrate comprises a semiconductor substrate and a metallization layer. The first bonding layer and the semiconductor substrate are patterned to form first openings. A second substrate is bonded to the first substrate. After the bonding the second substrate, the second substrate is patterned to form second openings, at least one of the second openings exposing at least one of the first openings. After the patterning the second substrate, a third substrate is bonded to the second substrate, and after the bonding the third substrate, the third substrate is patterned to form third openings, at least one of the third openings exposing at least one of the second openings.