公开(公告)号：US20240377766A1

公开(公告)日：2024-11-14

申请号：US18783178

申请日：2024-07-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Hui LI ,  Cheng-Han YEH ,  Tzung-Chi FU

IPC: G03F7/00 ,  G03F1/82 ,  H05G2/00

Abstract: An extreme ultraviolet (EUV) photolithography system cleans debris from an EUV reticle. The system includes a cleaning electrode configured to be positioned adjacent the EUV reticle. The system includes a voltage source that helps draw debris from the EUV reticle toward the cleaning electrode by applying a voltage of alternating polarity to the cleaning electrode.

公开(公告)号：US20230280666A1

公开(公告)日：2023-09-07

申请号：US18314728

申请日：2023-05-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Hui LI ,  Cheng-Han YEH ,  Tzung-Chi FU

IPC: G03F7/20 ,  H05G2/00 ,  G03F1/82

CPC classification number: G03F7/70925 ,  G03F7/70916 ,  H05G2/003 ,  G03F7/70033 ,  G03F1/82

Abstract: An extreme ultraviolet (EUV) photolithography system cleans debris from an EUV reticle. The system includes a cleaning electrode configured to be positioned adjacent the EUV reticle. The system includes a voltage source that helps draw debris from the EUV reticle toward the cleaning electrode by applying a voltage of alternating polarity to the cleaning electrode.