公开(公告)号：US09290376B1

公开(公告)日：2016-03-22

申请号：US14737896

申请日：2015-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chien-Hsuan Tai ,  Chia-Hua Chu

IPC: H01L27/00 ,  B81B7/00 ,  B81C1/00 ,  H01L27/12 ,  H01L27/20 ,  H01L27/146

CPC classification number: H01L27/12 ,  B81B2203/0127 ,  B81C1/00238 ,  H01L27/14692 ,  H01L27/20

Abstract: In some embodiments, the present disclosure provides a MEMS package. The MEMS package includes a MEMS IC comprising a MEMS substrate, a dielectric layer disposed over the MEMS substrate, and a piezoelectric layer disposed over the dielectric layer. The dielectric layer includes a flexible diaphragm made of dielectric material, and the piezoelectric layer includes a piezoelectric opening over the flexible diaphragm. A CMOS IC includes a CMOS substrate and an electrical interconnect structure. The CMOS IC is bonded to the MEMS IC so the electrical interconnect structure is proximate to the piezoelectric layer and so the CMOS IC encloses a back cavity over the flexible diaphragm. A support layer is disposed between the electrical interconnect structure and the piezoelectric layer. The support layer has a support layer opening which is disposed at a position vertically aligned with the flexible diaphragm and which is a part of the back cavity.

Abstract translation: 在一些实施例中，本公开提供了MEMS封装。 MEMS封装包括包括MEMS衬底的MEMS IC，设置在MEMS衬底上的电介质层和设置在电介质层上的压电层。 电介质层包括由电介质材料制成的柔性隔膜，压电层包括柔性隔膜上方的压电开口。 CMOS IC包括CMOS衬底和电互连结构。 CMOS IC结合到MEMS IC，使得电互连结构接近于压电层，因此CMOS IC在柔性隔膜上封闭后腔。 支撑层设置在电互连结构和压电层之间。 支撑层具有支撑层开口，该支撑层开口设置在与柔性隔膜垂直对准的位置，并且是后腔的一部分。