公开(公告)号：US11020778B2

公开(公告)日：2021-06-01

申请号：US16503571

申请日：2019-07-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Jen Hsiao ,  Ya-Ping Chen ,  Chien-Hung Lin ,  Wen-Pin Liu ,  Chin-Wen Chen

IPC: H01L21/027 ,  B08B7/00 ,  G03F7/42 ,  H01J37/32

Abstract: A photoresist removal method is provided. The photoresist removal method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The photoresist removal method further includes selecting one of the tested recipes as a process recipe based on the analysis results from the residue gas analyzer and at least one expected performance criterion. In addition, the photoresist removal method includes performing a plasma ash process on a semiconductor substrate according to the process recipe to remove a photoresist layer from the semiconductor substrate.