公开(公告)号：US20230378261A1

公开(公告)日：2023-11-23

申请号：US17751367

申请日：2022-05-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsuan-Hsiao Yao ,  Po-Kai Hsiao ,  Fan-Cheng Lin ,  Tsai-Yu Huang ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/786 ,  H01L21/8234

CPC classification number: H01L29/0665 ,  H01L29/66742 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/78618 ,  H01L29/78696 ,  H01L21/823431 ,  H01L21/823412 ,  H01L21/823418

Abstract: In an embodiment, a method of forming a semiconductor device includes: forming a first oxide layer over a semiconductor fin structure; performing a first nitridation process to convert the first oxide layer to an oxynitride layer; depositing a silicon-containing layer over the oxynitride layer; performing a first anneal on the silicon-containing layer, wherein after performing the first anneal, the oxynitride layer has a higher nitrogen atomic concentration at an interface with the semiconductor fin structure than in a bulk region of the oxynitride layer; and forming a dummy gate structure over the silicon-containing layer.