公开(公告)号：US20240379462A1

公开(公告)日：2024-11-14

申请号：US18779481

申请日：2024-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Shyang Wu ,  Kuo-Ming Wu

IPC: H01L21/8258 ,  H01L21/762 ,  H01L21/768 ,  H01L21/84 ,  H01L23/535 ,  H01L27/12

Abstract: In an embodiment, a device includes: a gallium nitride device on a substrate, the gallium nitride device including an electrode; a dielectric layer on and around the gallium nitride device; an isolation layer on the dielectric layer; a semiconductor layer on the isolation layer, the semiconductor layer including a silicon device; a through via extending through the semiconductor layer, the isolation layer, and the dielectric layer, the through via electrically and physically coupled to the electrode of the gallium nitride device; and an interconnect structure on the semiconductor layer, the interconnect structure including metallization patterns electrically coupled to the through via and the silicon device.

公开(公告)号：US20230282525A1

公开(公告)日：2023-09-07

申请号：US17748363

申请日：2022-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Shyang Wu ,  Kuo-Ming Wu

IPC: H01L21/8258 ,  H01L27/12 ,  H01L23/535 ,  H01L21/84

CPC classification number: H01L21/8258 ,  H01L27/1207 ,  H01L27/1203 ,  H01L23/535 ,  H01L21/84 ,  H01L21/76251

Abstract: In an embodiment, a device includes: a gallium nitride device on a substrate, the gallium nitride device including an electrode; a dielectric layer on and around the gallium nitride device; an isolation layer on the dielectric layer; a semiconductor layer on the isolation layer, the semiconductor layer including a silicon device; a through via extending through the semiconductor layer, the isolation layer, and the dielectric layer, the through via electrically and physically coupled to the electrode of the gallium nitride device; and an interconnect structure on the semiconductor layer, the interconnect structure including metallization patterns electrically coupled to the through via and the silicon device.