公开(公告)号：US20230395683A1

公开(公告)日：2023-12-07

申请号：US17833803

申请日：2022-06-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuei-Lin CHAN ,  Fu-Ting YEN ,  Yu-Yun PENG ,  Keng-Chu LIN

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L21/306 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L29/66795 ,  H01L29/0669 ,  H01L21/30604 ,  H01L21/0226 ,  H01L29/78687

Abstract: A post-deposition treatment can be applied to an atomic layer deposition (ALD)-deposited film to seal one or more seams at the surface. The seam-top treatment can physically merge the two sides of the seam, so that the surface behaves as a continuous material to allow etching at a substantially uniform rate across the surface of the film. The seam-top treatment can be used to merge seams in ALD-deposited films within semiconductor structures, such as gate-all-around field effect transistors (GAAFETs).