公开(公告)号：US20250113504A1

公开(公告)日：2025-04-03

申请号：US18981103

申请日：2024-12-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Kai SHIH ,  Kuo-Liang WANG

IPC: H01L23/522

Abstract: Semiconductor devices and methods are disclosed herein. In one example, a disclosed semiconductor device includes: an insulation layer, a first electrode with sidewalls and a bottom surface in contact with the insulation layer; a second electrode with sidewalls and a bottom surface in contact with the insulation layer; and an insulator formed between the first electrode and the second electrode. The insulator is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.

公开(公告)号：US20230387187A1

公开(公告)日：2023-11-30

申请号：US18231754

申请日：2023-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Kai SHIH ,  Kuo-Liang WANG

IPC: H01G4/33 ,  H01L23/522

CPC classification number: H01L28/55 ,  H01L28/40 ,  H01L28/86 ,  H01L28/92 ,  H01L23/5223 ,  H01L28/91 ,  H01L28/90 ,  H01L28/60

Abstract: Semiconductor devices and methods are disclosed herein. In one example, a disclosed semiconductor device includes: an insulation layer, a first electrode with sidewalls and a bottom surface in contact with the insulation layer; a second electrode with sidewalls and a bottom surface in contact with the insulation layer; and an insulator formed between the first electrode and the second electrode. The insulator is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.

公开(公告)号：US20220085145A1

公开(公告)日：2022-03-17

申请号：US17502924

申请日：2021-10-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Kai SHIH ,  Kuo-Liang WANG

IPC: H01L49/02

Abstract: Semiconductor devices and methods are disclosed herein. In one example, a disclosed semiconductor device includes: an insulation layer, a first electrode with sidewalls and a bottom surface in contact with the insulation layer; a second electrode with sidewalls and a bottom surface in contact with the insulation layer; and an insulator formed between the first electrode and the second electrode. The insulator is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.