公开(公告)号：US20230178379A1

公开(公告)日：2023-06-08

申请号：US17706152

申请日：2022-03-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ssu-Yu Ho ,  Szu-Ping Tung ,  Ching-Yu Chang

IPC: H01L21/47 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/47 ,  H01L21/0274 ,  H01L21/02263

Abstract: Embodiments utilize a photoetching process in forming a patterned target layer. After forming a patterned mandrel layer and spacer layer over the patterned mandrel layer, a bottom layer of a photomask is deposited using a chemical vapor deposition process to form an amorphous carbon film. An upper layer of the photomask is used to pattern the bottom layer to form openings for a reverse material. The reverse material is deposited in the openings of the bottom layer, the bottom layer providing both a mask and template function for the reverse material.