公开(公告)号：US10741477B2

公开(公告)日：2020-08-11

申请号：US15933396

申请日：2018-03-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Lung Yang ,  Chih-Hung Su ,  Chen-Shien Chen ,  Hon-Lin Huang ,  Kun-Ming Tsai ,  Wei-Je Lin

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/528 ,  H01L21/48

Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.

公开(公告)号：US20190295925A1

公开(公告)日：2019-09-26

申请号：US15933396

申请日：2018-03-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Lung Yang ,  CHIH-HUNG Su ,  Chen-Shien Chen ,  Hon-Lin Huang ,  Kun-Ming Tsai ,  Wei-Je Lin

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/528 ,  H01L21/48

Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.

公开(公告)号：US11387168B2

公开(公告)日：2022-07-12

申请号：US16925332

申请日：2020-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Lung Yang ,  Chih-Hung Su ,  Chen-Shien Chen ,  Hon-Lin Huang ,  Kun-Ming Tsai ,  Wei-Je Lin

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/528 ,  H01L21/48

Abstract: A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.

公开(公告)号：US20200343162A1

公开(公告)日：2020-10-29

申请号：US16925332

申请日：2020-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Lung Yang ,  Chih-Hung Su ,  Chen-Shien Chen ,  Hon-Lin Huang ,  Kun-Ming Tsai ,  Wei-Je Lin

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/528 ,  H01L21/48

Abstract: A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.