公开(公告)号：US20200057351A1

公开(公告)日：2020-02-20

申请号：US16532270

申请日：2019-08-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Huan-Neng CHEN ,  Chewn-Pu JOU ,  Lan-Chou CHO ,  Feng-Wei KUO ,  Yutong WU

IPC: G02F1/225 ,  H01P1/18

Abstract: In an embodiment, a phase shifter includes: a light input end; a light output end; a p-type semiconductor material, and an n-type semiconductor material contacting the p-type semiconductor material along a boundary area, wherein the boundary area is greater than a length from the light input end to the light output end multiplied by a core width of the phase shifter.