公开(公告)号：US20240355761A1

公开(公告)日：2024-10-24

申请号：US18760292

申请日：2024-07-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jiun-Yu Chen ,  Chun-Lin Tsai ,  Yun-Hsiang Wang ,  Chia-Hsun Wu ,  Jiun-Lei Yu ,  Po-Chih Chen

IPC分类号： H01L23/00 ,  H01L23/58 ,  H01L25/065 ,  H01L29/06

CPC分类号： H01L23/562 ,  H01L23/585 ,  H01L25/0657 ,  H01L29/0657 ,  H01L2225/06541

摘要： In some embodiments, the present disclosure relates to a semiconductor structure. The semiconductor substrate includes a semiconductor material over a base substrate. The semiconductor substrate has one or more sidewalls forming a crack stop trench that is laterally between a central region of the semiconductor substrate and a peripheral region of the semiconductor substrate that surrounds the central region. The peripheral region of the semiconductor substrate includes a plurality of cracks.

公开(公告)号：US20230369245A1

公开(公告)日：2023-11-16

申请号：US18355470

申请日：2023-07-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jiun-Yu Chen ,  Chun-Lin Tsai ,  Yun-Hsiang Wang ,  Chia-Hsun Wu ,  Jiun-Lei Yu ,  Po-Chih Chen

IPC分类号： H01L23/00 ,  H01L23/58 ,  H01L29/06 ,  H01L25/065

CPC分类号： H01L23/562 ,  H01L23/585 ,  H01L29/0657 ,  H01L25/0657 ,  H01L2225/06541

摘要： In some embodiments, the present disclosure relates to a semiconductor structure. The semiconductor structure includes a stacked semiconductor substrate having a semiconductor material disposed over a base semiconductor substrate. The base semiconductor substrate has a first coefficient of thermal expansion and the semiconductor material has a second coefficient of thermal expansion that is different than the first coefficient of thermal expansion. The stacked semiconductor substrate includes one or more sidewalls defining a crack stop ring trench that continuously extends in a closed path between a central region of the stacked semiconductor substrate and a peripheral region of the stacked semiconductor substrate surrounding the central region. The peripheral region of the stacked semiconductor substrate includes a plurality of cracks and the central region is substantially devoid of cracks.

公开(公告)号：US12094838B2

公开(公告)日：2024-09-17

申请号：US18355470

申请日：2023-07-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jiun-Yu Chen ,  Chun-Lin Tsai ,  Yun-Hsiang Wang ,  Chia-Hsun Wu ,  Jiun-Lei Yu ,  Po-Chih Chen

IPC分类号： H01L23/00 ,  H01L23/58 ,  H01L25/065 ,  H01L29/06

CPC分类号： H01L23/562 ,  H01L23/585 ,  H01L25/0657 ,  H01L29/0657 ,  H01L2225/06541

摘要： In some embodiments, the present disclosure relates to a semiconductor structure. The semiconductor structure includes a stacked semiconductor substrate having a semiconductor material disposed over a base semiconductor substrate. The base semiconductor substrate has a first coefficient of thermal expansion and the semiconductor material has a second coefficient of thermal expansion that is different than the first coefficient of thermal expansion. The stacked semiconductor substrate includes one or more sidewalls defining a crack stop ring trench that continuously extends in a closed path between a central region of the stacked semiconductor substrate and a peripheral region of the stacked semiconductor substrate surrounding the central region. The peripheral region of the stacked semiconductor substrate includes a plurality of cracks and the central region is substantially devoid of cracks.