公开(公告)号：US20140186750A1

公开(公告)日：2014-07-03

申请号：US13731420

申请日：2012-12-31

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chien-Hsing Lu ,  Chung-Hung Lin ,  Chih-Wei Wen

IPC分类号： G03F1/74

CPC分类号： G03F7/70866 ,  G03F1/74 ,  Y10S430/143

摘要： A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.

摘要翻译： 一种方法包括在光刻掩模上执行光束扫描以修复光刻掩模。 在光束扫描之后，对光刻掩模进行放射线处理。 该方法由包括被配置为在光刻掩模上生成和投影光束的光束发生器的设备执行，被配置为在光刻掩模上产生辐射的辐射源以及被配置为将处理气体释放到光刻上的处理气体源 面具。 该过程与光刻掩模的表面部分反应以修复光刻掩模。 通过辐射处理，去除光刻掩模上的残留处理气体。

公开(公告)号：US08999610B2

公开(公告)日：2015-04-07

申请号：US13731420

申请日：2012-12-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chien-Hsing Lu ,  Chung-Hung Lin ,  Chih-Wei Wen

IPC分类号： G03F1/74

CPC分类号： G03F7/70866 ,  G03F1/74 ,  Y10S430/143

摘要： A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.

摘要翻译： 一种方法包括在光刻掩模上执行光束扫描以修复光刻掩模。 在光束扫描之后，对光刻掩模进行放射线处理。 该方法由包括被配置为在光刻掩模上生成和投影光束的光束发生器的设备执行，被配置为在光刻掩模上产生辐射的辐射源以及被配置为将处理气体释放到光刻上的处理气体源 面具。 该过程与光刻掩模的表面部分反应以修复光刻掩模。 通过辐射处理，去除光刻掩模上的残留处理气体。

公开(公告)号：US20150146186A1

公开(公告)日：2015-05-28

申请号：US14609206

申请日：2015-01-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chien-Hsing Lu ,  Chung-Hung Lin ,  Chih-Wei Wen

IPC分类号： G03F7/20

CPC分类号： G03F7/70866 ,  G03F1/74 ,  Y10S430/143

摘要： A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.

摘要翻译： 一种方法包括在光刻掩模上执行光束扫描以修复光刻掩模。 在光束扫描之后，对光刻掩模进行放射线处理。 该方法由包括被配置为在光刻掩模上生成和投影光束的光束发生器的设备执行，被配置为在光刻掩模上产生辐射的辐射源以及被配置为将处理气体释放到光刻上的处理气体源 面具。 该过程与光刻掩模的表面部分反应以修复光刻掩模。 通过辐射处理，去除光刻掩模上的残留处理气体。