公开(公告)号：US11532695B2

公开(公告)日：2022-12-20

申请号：US16948527

申请日：2020-09-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jin-Mu Yin ,  Hung-Chao Kao ,  Hsiang-Ku Shen ,  Dian-Hau Chen ,  Yen-Ming Chen

IPC分类号： H01L23/522 ,  H01L49/02

摘要： A method and semiconductor device including a substrate having one or more semiconductor devices. In some embodiments, the device further includes a first passivation layer disposed over the one or more semiconductor devices. The device may further include a metal-insulator-metal (MIM) capacitor structure formed over the first passivation layer. In addition, the device may further include a second passivation layer disposed over the MIM capacitor structure. In various examples, a stress-reduction feature is embedded within the second passivation layer. In some embodiments, the stress-reduction feature includes a first nitrogen-containing layer, an oxygen-containing layer disposed over the first nitrogen-containing layer, and a second nitrogen-containing layer disposed over the oxygen containing layer.

公开(公告)号：US20220157969A1

公开(公告)日：2022-05-19

申请号：US17097711

申请日：2020-11-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jin-Mu Yin ,  Wei-Yang Lee ,  Chih-Hao Yu ,  Yen-Ting Chen ,  Chia-Pin Lin

IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L29/423 ,  H01L29/78

摘要： The present disclosure provides a semiconductor device and a method of forming the same. A semiconductor device according to the present disclosure includes a first source/drain feature and a second source/drain feature over a substrate, a plurality of channel members extending between the first source/drain feature and the second source/drain feature, a plurality of inner spacer features interleaving the plurality of channel members, a gate structure wrapping around each of the plurality of channel members, and a semiconductor liner sandwiched between the gate structure and each of the plurality of inner spacer features.

公开(公告)号：US12021133B2

公开(公告)日：2024-06-25

申请号：US17869028

申请日：2022-07-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jin-Mu Yin ,  Wei-Yang Lee ,  Chih-Hao Yu ,  Yen-Ting Chen ,  Chia-Pin Lin

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66553 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78696

摘要： The present disclosure provides a semiconductor device and a method of forming the same. A semiconductor device according to the present disclosure includes a first source/drain feature and a second source/drain feature over a substrate, a plurality of channel members extending between the first source/drain feature and the second source/drain feature, a plurality of inner spacer features interleaving the plurality of channel members, a gate structure wrapping around each of the plurality of channel members, and a semiconductor liner sandwiched between the gate structure and each of the plurality of inner spacer features.

公开(公告)号：US20220352350A1

公开(公告)日：2022-11-03

申请号：US17869028

申请日：2022-07-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jin-Mu Yin ,  Wei-Yang Lee ,  Chih-Hao Yu ,  Yen-Ting Chen ,  Chia-Pin Lin

IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L29/78 ,  H01L29/423

摘要： The present disclosure provides a semiconductor device and a method of forming the same. A semiconductor device according to the present disclosure includes a first source/drain feature and a second source/drain feature over a substrate, a plurality of channel members extending between the first source/drain feature and the second source/drain feature, a plurality of inner spacer features interleaving the plurality of channel members, a gate structure wrapping around each of the plurality of channel members, and a semiconductor liner sandwiched between the gate structure and each of the plurality of inner spacer features.

公开(公告)号：US11222946B2

公开(公告)日：2022-01-11

申请号：US16400860

申请日：2019-05-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jin-Mu Yin ,  Hung-Chao Kao ,  Dian-Hau Chen ,  Hui-Chi Chen ,  Hsiang-Ku Shen ,  Yen-Ming Chen

IPC分类号： H01L49/02

摘要： Methods of forming a 3-dimensional metal-insulator-metal super high density (3D-MIM-SHD) capacitor and semiconductor device are disclosed herein. A method includes depositing a base layer of a first dielectric material over a semiconductor substrate and etching a series of recesses in the base layer. Once the series of recesses have been etched into the base layer, a series of conductive layers and dielectric layers may be deposited within the series of recesses to form a three dimensional corrugated stack of conductive layers separated by the dielectric layers. A first contact plug may be formed through a middle conductive layer of the corrugated stack and a second contact plug may be formed through a top conductive layer and a bottom conductive layer of the corrugated stack. The contact plugs electrically couple the conductive layers to one or more active devices of the semiconductor substrate.

公开(公告)号：US20200176557A1

公开(公告)日：2020-06-04

申请号：US16400860

申请日：2019-05-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jin-Mu Yin ,  Hung-Chao Kao ,  Dian-Hau Chen ,  Hui-Chi Chen ,  Hsiang-Ku Shen ,  Yen-Ming Chen

IPC分类号： H01L49/02

摘要： Methods of forming a 3-dimensional metal-insulator-metal super high density (3D-MIM-SHD) capacitor and semiconductor device are disclosed herein. A method includes depositing a base layer of a first dielectric material over a semiconductor substrate and etching a series of recesses in the base layer. Once the series of recesses have been etched into the base layer, a series of conductive layers and dielectric layers may be deposited within the series of recesses to form a three dimensional corrugated stack of conductive layers separated by the dielectric layers. A first contact plug may be formed through a middle conductive layer of the corrugated stack and a second contact plug may be formed through a top conductive layer and a bottom conductive layer of the corrugated stack. The contact plugs electrically couple the conductive layers to one or more active devices of the semiconductor substrate.

公开(公告)号：US20240347624A1

公开(公告)日：2024-10-17

申请号：US18753469

申请日：2024-06-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jin-Mu Yin ,  Wei-Yang Lee ,  Chih-Hao Yu ,  Yen-Ting Chen ,  Chia-Pin Lin

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66553 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78696

摘要： The present disclosure provides a semiconductor device and a method of forming the same. A semiconductor device according to the present disclosure includes a first source/drain feature and a second source/drain feature over a substrate, a plurality of channel members extending between the first source/drain feature and the second source/drain feature, a plurality of inner spacer features interleaving the plurality of channel members, a gate structure wrapping around each of the plurality of channel members, and a semiconductor liner sandwiched between the gate structure and each of the plurality of inner spacer features.

公开(公告)号：US11444178B2

公开(公告)日：2022-09-13

申请号：US17097711

申请日：2020-11-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jin-Mu Yin ,  Wei-Yang Lee ,  Chih-Hao Yu ,  Yen-Ting Chen ,  Chia-Pin Lin

IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L29/78 ,  H01L29/423

摘要： The present disclosure provides a semiconductor device and a method of forming the same. A semiconductor device according to the present disclosure includes a first source/drain feature and a second source/drain feature over a substrate, a plurality of channel members extending between the first source/drain feature and the second source/drain feature, a plurality of inner spacer features interleaving the plurality of channel members, a gate structure wrapping around each of the plurality of channel members, and a semiconductor liner sandwiched between the gate structure and each of the plurality of inner spacer features.