公开(公告)号：US20230041094A1

公开(公告)日：2023-02-09

申请号：US17669673

申请日：2022-02-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tsung-Hsien Huang ,  Wei-jer Hsieh ,  Tsung-Yuan Huang ,  Yu-Hao Hsu

IPC分类号： G11C11/418

摘要： A memory device and a method of operating the memory device are disclosed. In one aspect, the memory device includes a word line driver connected to a word line, a row of memory cells connected to the word line, each memory cell powered by a first supply voltage, and a power circuit. The power circuit is configured to provide the first supply voltage to the word line driver when a read condition is satisfied, and a second supply voltage to the word line driver when the read condition is not satisfied, the second supply voltage being less than the first supply voltage.

公开(公告)号：US12125525B2

公开(公告)日：2024-10-22

申请号：US17669673

申请日：2022-02-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tsung-Hsien Huang ,  Wei-jer Hsieh ,  Tsung-Yuan Huang ,  Yu-Hao Hsu

IPC分类号： G11C11/418

CPC分类号： G11C11/418

摘要： A memory device and a method of operating the memory device are disclosed. In one aspect, the memory device includes a word line driver connected to a word line, a row of memory cells connected to the word line, each memory cell powered by a first supply voltage, and a power circuit. The power circuit is configured to provide the first supply voltage to the word line driver when a read condition is satisfied, and a second supply voltage to the word line driver when the read condition is not satisfied, the second supply voltage being less than the first supply voltage.