公开(公告)号：US20230352508A1

公开(公告)日：2023-11-02

申请号：US17892820

申请日：2022-08-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei Chih Huang ,  Shuang-Ji Tsai ,  Hsing-Chih Lin ,  Jen-Cheng Liu ,  Dun-Nian Yaung

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14689

摘要： Image sensors and processes of forming the same are provided. An image sensor according to the present disclosure includes a first photodiode disposed between a second photodiode and a third photodiode along a direction, a first deep trench isolation (DTI) feature disposed between the first photodiode and the second photodiode, and a second DTI feature disposed between the first photodiode and the third photodiode. A depth of the first DTI feature is greater than a depth of the second DTI feature. A quantum efficiency of the second photodiode is smaller than a quantum efficiency of the first photodiode.