公开(公告)号：US20240363714A1

公开(公告)日：2024-10-31

申请号：US18767188

申请日：2024-07-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuan-Hao CHENG ,  Wei-Yang LEE ,  Tzu-Hua CHIU ,  Wei-Han FAN ,  Po-Yu LIN ,  Chia-Pin LIN

IPC分类号： H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/42392 ,  H01L29/0673 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66787 ,  H01L29/78618 ,  H01L29/78696

摘要： A semiconductor structure is provided. The semiconductor structure includes a first nanostructure stacked over and spaced apart from a second nanostructure, a gate stack wrapping around the first nanostructure and the second nanostructure, a source/drain feature adjoining the first nanostructure and the second nanostructure, and a first inner spacer layer interposing the gate stack and the source/drain feature and interposing the first nanostructure and the second nanostructure. A dopant in the source/drain feature has a first concentration at an interface between the first inner spacer layer and the source/drain feature and a second concentration at a first distance away from the interface. The first concentration is higher than the second concentration.

公开(公告)号：US20230018480A1

公开(公告)日：2023-01-19

申请号：US17377961

申请日：2021-07-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuan-Hao CHENG ,  Wei-Yang LEE ,  Tzu-Hua CHIU ,  Wei-Han FAN ,  Po-Yu LIN ,  Chia-Pin LIN

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/786

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a fin over the base. The semiconductor device structure includes a gate stack over a top portion of the fin. The semiconductor device structure includes a first nanostructure over the fin and passing through the gate stack. The semiconductor device structure includes a second nanostructure over the first nanostructure and passing through the gate stack. The first nanostructure is thicker than the second nanostructure. The semiconductor device structure includes a stressor structure over the fin and connected to the first nanostructure and the second nanostructure.

公开(公告)号：US20230017036A1

公开(公告)日：2023-01-19

申请号：US17662038

申请日：2022-05-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Han FAN ,  Chia-Pin LIN ,  Wei-Yang LEE ,  Tzu-Hua CHIU ,  Kuan-Hao CHENG ,  Po Shao LIN

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  H01L29/40

摘要： A method of fabricating a device includes providing a fin having a stack of epitaxial layers including a plurality of semiconductor channel layers interposed by a plurality of dummy layers. A source/drain etch process is performed to remove portions of the stack of epitaxial layers in source/drain regions to form trenches that expose lateral surfaces of the stack of epitaxial layers. A dummy layer recess process is performed to laterally etch the plurality of dummy layers to form recesses along sidewalls of the trenches. An inner spacer material is deposited along sidewalls of the trenches and within the recesses. An inner spacer etch-back process is performed to remove the inner spacer material from the sidewalls of the trenches and to remove a portion of the inner spacer material from within the recesses to form inner spacers having a dish-like region along lateral surfaces of the inner spacers.

公开(公告)号：US20230052084A1

公开(公告)日：2023-02-16

申请号：US17400446

申请日：2021-08-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuan-Hao CHENG ,  Wei-Yang LEE ,  Tzu-Hua CHIU ,  Wei-Han FAN ,  Po-Yu LIN ,  Chia-Pin LIN

IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L21/324 ,  H01L29/66

摘要： A semiconductor structure is provided. The semiconductor structure includes a first nanostructure stacked over and spaced apart from a second nanostructure, a gate stack wrapping around the first nanostructure and the second nanostructure, a source/drain feature adjoining the first nanostructure and the second nanostructure, and a first inner spacer layer interposing the gate stack and the source/drain feature and interposing the first nanostructure and the second nanostructure. A dopant in the source/drain feature has a first concentration at an interface between the first inner spacer layer and the source/drain feature and a second concentration at a first distance away from the interface. The first concentration is higher than the second concentration.