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公开(公告)号：US10283702B2
公开(公告)日：2019-05-07
申请号：US15845812
申请日：2017-12-18
Inventor： Ting-Chang Chang , Yong-En Syu , Fu-Yen Jian , Shih-Chieh Chang , Ying-Lang Wang
Abstract: Methods for a resistive random access memory (RRAM) device are disclosed. A bottom electrode is formed over a substrate. A top electrode is formed over the bottom electrode. A resistive switching layer is formed interposed between the top electrode and the bottom electrode. The resistive switching is made of a composite of a metal, Si, and O, formed by oxidation of a metal silicide of a metal, co-deposition of the metal and silicon in oxygen ambiance, co-deposition of a metal oxide of the metal and silicon, or co-deposition of a metal oxide of the metal and silicon oxide. There may be an additional tunnel barrier layer between the top electrode and the bottom electrode. The top electrode and the bottom electrode may comprise multiple sub-layers.
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公开(公告)号：US20180108836A1
公开(公告)日：2018-04-19
申请号：US15845812
申请日：2017-12-18
Inventor： Ting-Chang Chang , Yong-En Syu , Fu-Yen Jian , Shih-Chieh Chang , Ying-Lang Wang
CPC classification number: H01L45/04 , H01L27/2436 , H01L45/12 , H01L45/145 , H01L45/1608
Abstract: Methods for a resistive random access memory (RRAM) device are disclosed. A bottom electrode is formed over a substrate. A top electrode is formed over the bottom electrode. A resistive switching layer is formed interposed between the top electrode and the bottom electrode. The resistive switching is made of a composite of a metal, Si, and O, formed by oxidation of a metal silicide of a metal, co-deposition of the metal and silicon in oxygen ambiance, co-deposition of a metal oxide of the metal and silicon, or co-deposition of a metal oxide of the metal and silicon oxide. There may be an additional tunnel barrier layer between the top electrode and the bottom electrode. The top electrode and the bottom electrode may comprise multiple sub-layers.
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