公开(公告)号：US20200118884A1

公开(公告)日：2020-04-16

申请号：US16714956

申请日：2019-12-16

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： I-Wen WU ,  Hsien-Cheng WANG ,  Mei-Yun WANG ,  Shih-Wen LIU ,  Chao-Hsun WANG ,  Yun LEE

IPC分类号： H01L21/8234 ,  H01L27/12 ,  H01L27/088 ,  H01L21/84 ,  H01L29/78

摘要： A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

公开(公告)号：US20190057906A1

公开(公告)日：2019-02-21

申请号：US16166238

申请日：2018-10-22

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： I-Wen WU ,  Hsien-Cheng WANG ,  Mei-Yun WANG ,  Shih-Wen LIU ,  Chao-Hsun WANG ,  Yun LEE

IPC分类号： H01L21/8234 ,  H01L29/78 ,  H01L27/12 ,  H01L27/088 ,  H01L21/84

摘要： A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.