公开(公告)号：US20240105815A1

公开(公告)日：2024-03-28

申请号：US18126690

申请日：2023-03-27

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chin-Yi HUANG ,  Shih Chan WEI ,  Wei Kai SHIH

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78

CPC分类号： H01L29/66674 ,  H01L29/0653 ,  H01L29/404 ,  H01L29/7801

摘要： A semiconductor structure and method of manufacture is provided. In some embodiments, a semiconductor structure includes a semiconductor layer, a first isolation structure in the semiconductor layer, a first gate structure adjacent a first side of the first isolation structure, a first source/drain region adjacent a second side of the first isolation structure, a second source/drain region adjacent the first gate structure, and a first conductive field plate at least partially embedded in the first isolation structure.