公开(公告)号：US12107013B2

公开(公告)日：2024-10-01

申请号：US17166558

申请日：2021-02-03

申请人： Taiwan Semicondutor Manufacturing Company Limited

发明人： Shih-Yao Lin ,  Chih-Han Lin ,  Shu-Yuan Ku ,  Shu-Uei Jang ,  Ya-Yi Tsai ,  I-Wei Yang

IPC分类号： H01L21/8234 ,  H01L27/088

CPC分类号： H01L21/823481 ,  H01L21/823431 ,  H01L27/0886

摘要： A semiconductor device includes a first semiconductor fin extending along a first direction. The semiconductor device includes a second semiconductor fin also extending along the first direction. The semiconductor device includes a dielectric structure disposed between the first and second semiconductor fins. The semiconductor device includes a gate isolation structure vertically disposed above the dielectric structure. The semiconductor device includes a metal gate layer extending along a second direction perpendicular to the first direction, wherein the metal gate layer includes a first portion straddling the first semiconductor fin and a second portion straddling the second semiconductor fin. The gate isolation structure separates the first and second portions of the metal gate layer from each other and includes a bottom portion extending into the dielectric structure.

公开(公告)号：US20210335674A1

公开(公告)日：2021-10-28

申请号：US17166558

申请日：2021-02-03

申请人： Taiwan Semicondutor Manufacturing Company Limited

发明人： Shih-Yao Lin ,  Chih-Han Lin ,  Shu-Yuan Ku ,  Shu-Uei Jang ,  Ya-Yi Tsai ,  I-Wei Yang

IPC分类号： H01L21/8234 ,  H01L27/088

摘要： A semiconductor device includes a first semiconductor fin extending along a first direction. The semiconductor device includes a second semiconductor fin also extending along the first direction. The semiconductor device includes a dielectric structure disposed between the first and second semiconductor fins. The semiconductor device includes a gate isolation structure vertically disposed above the dielectric structure. The semiconductor device includes a metal gate layer extending along a second direction perpendicular to the first direction, wherein the metal gate layer includes a first portion straddling the first semiconductor fin and a second portion straddling the second semiconductor fin. The gate isolation structure separates the first and second portions of the metal gate layer from each other and includes a bottom portion extending into the dielectric structure.