公开(公告)号：US20110065286A1

公开(公告)日：2011-03-17

申请号：US12841440

申请日：2010-07-22

申请人： Takafumi SASAKI ,  Masanao FUKUDA ,  Masayoshi MINAMI ,  Yasuhiro MEGAWA

发明人： Takafumi SASAKI ,  Masanao FUKUDA ,  Masayoshi MINAMI ,  Yasuhiro MEGAWA

IPC分类号： H01L21/71 ,  B05C11/00 ,  B05C21/00

CPC分类号： H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/67109 ,  H01L29/40114 ,  H01L29/7881

摘要： At a low temperature of 500° C. to 700° C., the concentration of atomic oxygen is controlled in a wafer stacked direction, and the thickness distribution of oxide films is kept uniform in the wafer stacked direction. A semiconductor device manufacturing method includes a process of oxidizing substrates by supplying oxygen-containing gas and hydrogen-containing gas through a mixing part from an end side of a substrate arrangement region where the substrates are arranged inside the process chamber so that the gases flow toward the other end side of the substrate arrangement region, and supplying hydrogen-containing gas from mid-flow locations corresponding to the substrate arrangement region. The oxygen-containing gas and the hydrogen-containing gas reacts with each other in the mixing part to produce an oxidation species containing atomic oxygen, and the oxidation species has a maximum concentration at an ejection hole through which the oxidation species is ejected from the mixing part into the process chamber.

摘要翻译： 在500℃〜700℃的低温下，原子氧的浓度在晶片堆叠方向上被控制，氧化膜的厚度分布在晶片堆叠方向上保持均匀。 半导体器件制造方法包括通过从基板布置区域的端面侧的混合部分供给含氧气体和含氢气体来进行氧化基板的处理，其中基板布置区域布置在处理室内，使得气体朝向 在衬底布置区域的另一端侧，并且从对应于衬底布置区域的中流动位置供给含氢气体。 含氧气体和含氢气体在混合部分中彼此反应以产生含有原子氧的氧化物质，氧化物质在喷射孔中具有最大浓度，氧化物质通过其从混合物中喷出 部分进入处理室。