公开(公告)号：US20060119725A1

公开(公告)日：2006-06-08

申请号：US11332885

申请日：2006-01-17

申请人： Takao Kuroda ,  Sei Suzuki ,  Kidera Akito

发明人： Takao Kuroda ,  Sei Suzuki ,  Kidera Akito

IPC分类号： H04N5/335

CPC分类号： H04N5/3728 ,  H04N5/357 ,  H04N5/3597

摘要： In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45-47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.

摘要翻译： 在使固态成像装置更小并且其像素数量增加的情况下，期望增加可以在转印部分的每单位面积处理的电荷量。 可以通过使绝缘膜更薄而实现这一点，但是这导致半导体衬底中的电场太强，并且引起噪声的产生和传输效率的劣化等问题。 本发明通过在读出信号电荷1（t = t 2 2）时施加向读出信号电荷的电极43施加的高电压，放松了转印区域中的潜在步骤， 低电压至至少一个电极41,45-47，用于防止信号电荷的不必要的混合，以及与电极43相邻的电极42和44的高电压和低电压之间的中间电压， 施加高电压。