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    Composite of silicon carbide and carbon and method of making the same
    2.
    发明授权
    Composite of silicon carbide and carbon and method of making the same 失效
    碳化硅和碳的复合及其制造方法

    公开(公告)号：US5540950A

    公开(公告)日：1996-07-30

    申请号：US333366

    申请日：1994-11-02

    申请人： Hajime Izawa ,  Takehito Arai ,  Taiji Yamamoto

    发明人： Hajime Izawa ,  Takehito Arai ,  Taiji Yamamoto

    IPC分类号： C04B35/52 ,  C04B35/56 ,  C04B35/573 ,  C04B41/50 ,  C04B41/87 ,  B05D3/02

    CPC分类号： C04B41/009 ,  C04B35/573 ,  C04B41/5059 ,  C04B41/87

    摘要： This invention relates to a composite of silicon carbide and carbon. This invention also relates to its manufacturing method. An obtained composite is used as heat resistant, wear resistant or chemical resistant materials. The object of this manufacturing method is to form a deep layer of silicon carbide and carbon in the surface of a carbon base by a simple process of causing a silicon containing material to penetrate into and react with the carbon block. Further object of this invention is to produce a compound in whole comprised of silicon carbide and carbon if the carbon block is 20 mm or below in thickness. To this end, according to this forming method a carbon block having a lattice constant c of 6.708 .ANG. to 6.900 .ANG. or below and a density of 1.3 g/cm.sup.3 to 1.7 g/cm.sup.3 or below is formed into a desired shape, and molten silicon containing material is caused to penetrate into and react with the carbon block thereby to obtain a surface layer composed to silicon carbide and carbon to a surface depth of 20 mm or below and having substantially the same shape as the carbon block.

    摘要翻译： 本发明涉及碳化硅和碳的复合物。 本发明还涉及其制造方法。 所得复合材料用作耐热，耐磨或耐化学腐蚀的材料。 该制造方法的目的是通过使含硅材料渗透并与碳块反应的简单方法在碳基表面形成碳化硅和碳的深层。 如果碳块的厚度为20mm以下，则本发明的另外的目的是制造整体由碳化硅和碳组成的化合物。 为此，根据该形成方法，将晶格常数c为6.708至6.900或更小，密度为1.3g / cm 3至1.7g / cm 3或更低的碳块形成为所需形状，并将熔融硅 使含碳材料渗透到碳块中并与碳块反应，从而获得由碳化硅和碳组成的表面层，其表面深度为20mm或更小，并具有与碳块基本相同的形状。