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公开(公告)号：US11550070B2
公开(公告)日：2023-01-10
申请号：US17305309
申请日：2021-07-02
Inventor： Yael Nemirovsky , Sharon Bar-Lev Shefi , Igor Brouk
IPC: G01T1/24
Abstract: There may be provided a radiation sensing device that includes a first TMOS with temperature dependent electrical parameters; wherein the first TMOS is exposed to radiation, and a second TMOS transistor that is sheltered from radiation. The radiation sensing device performs a differential measurement, and applied various measures for noise reduction, and maintaining the stability of the radiation sensing device.
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