公开(公告)号：US20230240088A1

公开(公告)日：2023-07-27

申请号：US17819061

申请日：2022-08-11

Applicant: Technion Research and Development Foundation Ltd.

Inventor： Tanmoy SARKAR ,  Gitti L. FREY

IPC: H10K10/46 ,  H10K19/10

CPC classification number: H10K10/466 ,  H10K19/10

Abstract: A transistor structure is presented comprising: an organic semiconductor channel region, and source and drain electrodes in electrical contact with said organic semiconductor channel region, wherein at least one of said source and drain electrodes is formed by spaced apart regions of a first metallic material separated by regions of a second metallic material such that regions of the first and second metallic materials are in contact with the organic semiconductor channel region, said first metallic material being selected as having work function substantially similar to HOMO energy level of said organic semiconductor channel region and said second metallic material being selected as having work function substantially similar to LUMO energy level of said organic semiconductor channel region, thereby enabling selective injections of electrons or holes into said channel region.