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公开(公告)号：US20120122280A1
公开(公告)日：2012-05-17
申请号：US13360203
申请日：2012-01-27
IPC分类号： H01L21/768
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
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公开(公告)号：US20120129340A1
公开(公告)日：2012-05-24
申请号：US13360248
申请日：2012-01-27
IPC分类号： H01L21/283
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
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公开(公告)号：US20120126367A1
公开(公告)日：2012-05-24
申请号：US13360277
申请日：2012-01-27
IPC分类号： H01L23/525
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
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公开(公告)号：US20110079874A1
公开(公告)日：2011-04-07
申请号：US12574926
申请日：2009-10-07
IPC分类号： H01L23/525 , H01L21/768
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
摘要翻译： 反熔丝结构和在反熔丝结构内形成接触的方法。 反熔丝结构包括具有上覆金属层的基板，形成在金属层的上表面上的电介质层，以及由通过电介质层蚀刻到金属层中的接触孔内的接触材料形成的接触。 接触通孔在接触通孔的底表面处包括金属材料，并且在金属材料的顶部上包括未处理或部分处理的金属前体。
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公开(公告)号：US08368070B2
公开(公告)日：2013-02-05
申请号：US13360277
申请日：2012-01-27
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
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公开(公告)号：US20120126366A1
公开(公告)日：2012-05-24
申请号：US13360270
申请日：2012-01-27
IPC分类号： H01L23/525
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
摘要翻译： 反熔丝结构和在反熔丝结构内形成接触的方法。 反熔丝结构包括具有上覆金属层的基板，形成在金属层的上表面上的电介质层，以及由通过电介质层蚀刻到金属层中的接触孔内的接触材料形成的接触。 接触通孔在接触通孔的底表面处包括金属材料，并且在金属材料的顶部上包括未处理或部分处理的金属前体。
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公开(公告)号：US08367484B2
公开(公告)日：2013-02-05
申请号：US13360248
申请日：2012-01-27
IPC分类号： H01L21/82
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
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公开(公告)号：US08367483B2
公开(公告)日：2013-02-05
申请号：US13360203
申请日：2012-01-27
IPC分类号： H01L21/82
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
摘要翻译： 反熔丝结构和在反熔丝结构内形成接触的方法。 反熔丝结构包括具有上覆金属层的基板，形成在金属层的上表面上的电介质层，以及由通过电介质层蚀刻到金属层中的接触孔内的接触材料形成的接触。 接触通孔在接触通孔的底表面处包括金属材料，并且在金属材料的顶部上包括未处理或部分处理的金属前体。
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公开(公告)号：US08125048B2
公开(公告)日：2012-02-28
申请号：US12574926
申请日：2009-10-07
IPC分类号： H01L29/00
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
摘要翻译： 反熔丝结构和在反熔丝结构内形成接触的方法。 反熔丝结构包括具有上覆金属层的基板，形成在金属层的上表面上的电介质层，以及由通过电介质层蚀刻到金属层中的接触孔内的接触材料形成的接触。 接触通孔在接触通孔的底表面处包括金属材料，并且在金属材料的顶部上包括未处理或部分处理的金属前体。
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公开(公告)号：US08368069B2
公开(公告)日：2013-02-05
申请号：US13360270
申请日：2012-01-27
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
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