公开(公告)号：US20150187632A1

公开(公告)日：2015-07-02

申请号：US14548812

申请日：2014-11-20

Applicant: Texas Instruments Incorporated

Inventor： Abbas ALI ,  Eric BEACH

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L28/24 ,  H01L21/7681 ,  H01L21/76834 ,  H01L23/5226 ,  H01L23/5228 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit with a metal thin film resistor with an overlying etch stop layer. A process for forming a metal thin film resistor in an integrated circuit with the addition of one lithography step.

Abstract translation: 具有金属薄膜电阻器的集成电路，具有上覆蚀刻停止层。 一种通过添加一个光刻步骤在集成电路中形成金属薄膜电阻器的工艺。