公开(公告)号：US20190108943A1

公开(公告)日：2019-04-11

申请号：US15730508

申请日：2017-10-11

Applicant: Texas Instruments Incorporated

Inventor： Gang Liu ,  Qi-Zhong Hong

IPC: H01G4/01 ,  H01G4/04 ,  H01G4/005 ,  H01G4/18 ,  H01G4/224 ,  H01L29/66

Abstract: High voltage capacitors and methods of manufacturing the same are disclosed. An apparatus includes a first electrode of a capacitor above a semiconductor substrate. The first electrode is parallel to a plane perpendicular to the substrate. The apparatus further includes a second electrode spaced apart from the first electrode and parallel to the plane. The first electrode and the second electrode each including: (1) a first metal segment in a first metal layer, (2) a second metal segment in a second metal layer, and (3) a conductive via in an intermetal dielectric layer between the first and second metal layers interconnecting the first and second metal segments.