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公开(公告)号:US12080454B2
公开(公告)日:2024-09-03
申请号:US17535872
申请日:2021-11-26
Applicant: Texas Instruments Incorporated
Inventor: Gernot Manfred Bauer , Kai-Alexander Schachtschneider
Abstract: An integrated circuit includes a thin film resistor body that is formed over a dielectric layer. An interfacial layer is formed on the thin film resistor body and resistor heads are formed on the interfacial layer. The thin film resistor body includes nickel chromium aluminum (NiCrAl) and the resistor heads include titanium tungsten (TiW).
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公开(公告)号:US20230170111A1
公开(公告)日:2023-06-01
申请号:US17535872
申请日:2021-11-26
Applicant: Texas Instruments Incorporated
Inventor: Gernot Manfred Bauer , Kai-Alexander Schachtschneider
Abstract: An integrated circuit includes a thin film resistor body that is formed over a dielectric layer. An interfacial layer is formed on the thin film resistor body and resistor heads are formed on the interfacial layer. The thin film resistor body includes nickel chromium aluminum (NiCrAl) and the resistor heads include titanium tungsten (TiW).
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