公开(公告)号：US20150187957A1

公开(公告)日：2015-07-02

申请号：US14584369

申请日：2014-12-29

Applicant: Texas Instruments Incorporated

Inventor： Hao DING ,  Seetharaman SRIDHAR

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/088

CPC classification number: H01L29/66477 ,  H01L21/823462 ,  H01L27/088

Abstract: An integrated circuit and method with a radiation hard transistor where the gate of the radiation hard transistor does not cross the boundary between active and isolation.

Abstract translation: 一种具有放射硬晶体管的集成电路和方法，其中辐射硬晶体管的栅极不跨越有源和隔离之间的边界。